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| (R) BUZ11A N - CHANNEL 50V - 0.045 - 26A TO-220 STripFETTM MOSFET T YPE BUZ11A s s s s s V DSS 50 V R DS(on) < 0.055 ID 26 A TYPICAL RDS(on) = 0.045 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE 3 1 2 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID IDM P tot Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN HUMIDITY CAT EGORY (DIN 40040) IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1) First digit of the datecode being Z or K identifies silicon characterized in this datasheet. o o Value 50 50 20 26 104 75 -65 to 175 175 E 55/150/56 Un it V V V A A W o o C C July 1999 1/8 BUZ11A THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30V) Valu e 30 120 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 50 1 10 100 Typ. Max. Unit V A A nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 20 V Tj = 125 oC ON () Symbo l V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V Test Con ditions ID = 1 mA ID = 19 A Min. 2.1 Typ. 3 0.045 Max. 4 0.055 Unit V DYNAMIC Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS = 25 V V DS = 25 V I D = 19 A f = 1 MHz V GS = 0 Min. 10 Typ. 17 1400 200 50 Max. Unit S pF pF pF SWITCHING Symbo l t d(on) tr t d(of f) tf Parameter Turn-on Time Rise Time Turn-off Delay T ime Fall T ime Test Con ditions V DD = 30 V R GS = 4.7 ID = 15 A V GS = 10 V Min. Typ. 18 95 50 20 Max. Unit ns ns ns ns 2/8 BUZ11A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbo l ISD I SDM V SD () t rr Q rr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge I SD = 60 A V GS = 0 85 0.19 I SD = 26 A di/dt = 100 A/s V DD = 30 V T j = 150 o C Test Con ditions Min. Typ. Max. 26 104 1.8 Unit A A V ns C () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ11A Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ11A Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 BUZ11A Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 BUZ11A TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 7/8 BUZ11A Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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